 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| inchange semiconductor isc product specification isc silicon npn power transistors 2SD458 description collector-emitter breakdown voltage- : v (br)ceo = 400v(min) high power dissipation- : p c = 80w(max)@t c =25 applications designed for high power amplifie r and switching a pplications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 600 v v cer collector-emitter voltage r be = 50 600 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 5 v i c collector current-continuous 5 a i cm collector current-peak 10 a i b b base current-continuous 2 a i bm base current-peak 3 a p c collector power dissipation @t c =25 80 w t j junction temperature 150 t stg storage temperature -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors 2SD458 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 400 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 1a b 1.5 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1a b 3.0 v i cer collector cutoff current v ce = 600v; r be = 50 1.0 ma h fe dc current gain i c = 5a; v ce = 5v 6.5 50 ? h fe classifications q r 15-50 6.5-30 isc website www.iscsemi.cn |
Price & Availability of 2SD458
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |